Home > Semiconductors & Electronics > Semiconductor > Semiconductor Equipment > GaN Semiconductor Device Market

GaN Semiconductor Device Market - By Type (Opto-semiconductors, RF Semiconductors, Power Semiconductors), By Component (Transistor, Diode, Rectifier, Power IC, Others), By Voltage Power, By End-use Industry & Forecast, 2024 – 2032

  • Report ID: GMI8345
  • Published Date: Feb 2024
  • Report Format: PDF

GaN Semiconductor Device Market Size

Gallium Nitride (GaN) Semiconductor Device Market was valued at over USD 17.5 billion in 2023 and is estimated to register a CAGR of over 22.5% between 2024 & 2032. GaN semiconductor devices are advanced electronic components that utilize Gallium Nitride as the semiconductor material. They offer superior performance compared to traditional silicon-based devices including higher efficiency, faster switching speeds, and better power handling capabilities.
 

GaN Semiconductor Device Market

GaN devices are used in various applications, such as power electronics, RF amplifiers, LED lighting, and automotive systems, boosting innovations across multiple industries. The growing need for fast data transfer is one of the main factors propelling the growth of GaN semiconductor devices. GaN's high-frequency operation and superior power handling capabilities enable the development of effective and compact RF amplifiers, power amplifiers, and other components essential for 5G networks, satellite communication systems, and broadband internet infrastructure. GaN's capacity to deliver high data rates and improved network capacity meets the increasing demands in digital communication networks and telecommunications for faster and more dependable data transmission.
 

For instance, in July 2023, STMicroelectronics began large-scale manufacturing of e-mode PowerGaN High-electron-mobility Transistor (HEMT) devices, streamlining the development of high-efficiency power conversion systems. The STPOWER GaN transistors enhance performance across various applications including wall adapters, chargers, lighting systems, industrial power supplies, renewable energy, and automotive electrification.
 

GaN is becoming increasingly common in consumer electronics as it makes power solutions lighter, smaller, and more effective. GaN-based power adapters and chargers fulfill the need for quick & convenient charging of smartphones, laptops, tablets, and other portable devices, offering faster charging speeds and higher power densities. Consumer preferences for devices with sleeker designs, longer battery lives, and better overall performance are stimulating this trend.
 

The GaN semiconductor devices market is hampered by integration issues resulting from variations in electrical properties, demands for thermal control, and interoperability with current systems. The design and integration of GaN devices frequently require circuit redesign, thermal solution optimization, and compatibility issue resolution, which increases development complexities and time-to-market.
 

GaN Semiconductor Device Market Trends

GaN technology is becoming increasingly important for power electronics applications due to its superior efficiency and power density. This is particularly relevant for industries including data centers, renewable energy, and Electric Vehicles (EVs). Owing to their high-frequency performance and power handling capabilities, GaN-based RF devices are gaining popularity in emerging 5G applications, satellite communication systems, and telecommunications infrastructure. Scalability and cost reductions brought about by GaN-on-silicon technology advancements are opening up GaN devices to a wider range of applications. For instance, in January 2024, Silvaco Group, Inc., a leading provider of TCAD, EDA software, and design IP, partnered with GaN Valley to drive advancements in efficient GaN power device design. By leveraging its Victory TCAD platform, Silvaco aims to empower customers to innovate and optimize performance in GaN-based semiconductor power devices. The Victory TCAD platform offers a comprehensive simulation environment, incorporating diverse numerical methods, physical models, SPICE model generation, and a user-friendly graphical interface, tailored specifically for the latest generation of GaN-based power devices.
 

GaN microelectronics are preferred for high-speed and high-power applications, expanding their uses in wireless communication networks, industrial automation, and radar systems. GaN technology will continue to be incorporated into medical devices, automotive systems, and consumer electronics due to the increasing need for smaller form factors, increased efficiency, and improved performance. In general, the GaN semiconductor device industry is distinguished by constant innovations and industry diversification.
 

GaN Semiconductor Device Market Analysis

GaN Semiconductor Device Market, By Component, 2021-2032, (USD Billion)

Based on component, the market is segmented into transistor, diode, rectifier, power IC, and others. The transistor segment accounted for a market share of over 35% in 2023.
 

  • Transistors play a pivotal role in the GaN semiconductor device industry owing to their importance in power electronics and RF applications. GaN transistors outperform traditional silicon transistors in terms of efficiency, switching speed, and power density. This makes GaN transistors suitable for power supplies, motor drives, RF amplifiers, and wireless communication systems.
     
  • The growing demand for energy-efficient and high-performance electronic devices in a variety of industries including automotive, telecommunications, and renewable energy is amplifying the use of GaN transistors. The GaN semiconductor device industry is expanding rapidly due to the wide uses of GaN transistors in a variety of applications.

 

GaN Semiconductor Device Market Share, By Type, 2023

Based on type, the market is segmented into opto-semiconductors, RF semiconductors, and power semiconductors. The RF semiconductors segment is estimated to register 23.5% CAGR from 2024 to 2032.
 

  • RF semiconductors are witnessing growing uses in defense, aerospace, and telecommunications applications. Compared to conventional silicon-based RF components, GaN RF devices offer a higher power density, a wider bandwidth, and better linearity, making them ideal for next-generation communication systems such as satellite communication and 5G networks.
     
  • The growing need for GaN-based RF power amplifiers in electronic warfare, radar systems, and wireless infrastructure is further propelling market expansion. The superior performance, efficiency, and dependability of these devices make them the preferred option for high frequency & high-power applications, fueling market growth.

 

China GaN Semiconductor Device Market Size, 2021-2032, (USD Billion)

Asia Pacific held a significant share of over 30% in the global market in 2023. Asia Pacific's GaN semiconductor device market is expanding rapidly owing to growing infrastructure development investments, increased EV adoption, and the rising demand for consumer electronics. China, Japan, South Korea, and Taiwan are leading the way in GaN technology innovation and manufacturing. Furthermore, the region's burgeoning telecommunications sector and the rapid deployment of 5G networks are augmenting the demand for GaN-based RF devices. Asia Pacific's strong presence in the semiconductor industry, as well as favorable government policies, foster the region's market.
 

GaN Semiconductor Device Market Share

Infineon Technologies AG holds a significant share in the GaN semiconductor device industry. Infineon Technologies AG provides GaN power devices for various applications including automotive, industrial, and consumer electronics. Its GaN power solutions offer high efficiency and reliability.
 

Major players including GaN Systems, Infineon Technologies AG, Cree, Inc., and Efficient Power Conversion Corporation are constantly implementing strategic measures, such as geographical expansion, acquisition, mergers, collaborations, partnerships, and product or service launches, to gain market share.
 

GaN Semiconductor Device Market Companies

Major players operating in the GaN semiconductor device industry are:

  • Cree, Inc.
  • Efficient Power Conversion Corporation
  • Fujitsu Ltd.
  • GaN Systems
  • Infineon Technologies AG
  • Mitsubishi Electric Group
  • NexGen Power Systems
  • NXP Semiconductors N.V.
  • Odyssey Semiconductor Technologies, Inc.
  • Qorvo, Inc.
  • ROHM Co., Ltd.
  • STMicroelectronics N.V.
  • Sumitomo Electric Industries, Ltd.
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • Wolfspeed, Inc.
     

GaN Semiconductor Device Industry News

  • In July 2023, STMicroelectronics began large-scale manufacturing of e-mode PowerGaN HEMT devices, streamlining the development of high-efficiency power-conversion systems. The STPOWER GaN transistors enhance performance across various applications including wall adapters, chargers, lighting systems, industrial power supplies, renewable energy, and automotive electrification.
     
  • In July 2022, Infineon Technologies AG collaborated with Delta Electronics on WBG-based server and gaming PC power solutions to deliver superior solutions for end customers. The cooperation included Delta's 1.6-kW Titanium gaming power platform and a 1.4-kW server power supply. The 1.4-kilowatt server power supply leverages Infineon Technology's CoolSiC MOSFET Technology and Delta's multi-decade core power electronics competence to achieve 96% efficiency.
     

The GaN semiconductor device market research report includes in-depth coverage of the industry with estimates & forecast in terms of revenue (USD Billion) from 2018 to 2032, for the following segments:

Click here to Buy Section of this Report


Market, By Type

  • Opto-semiconductors
  • RF semiconductors
  • Power semiconductors

Market, By Component

  • Transistor
  • Diode
  • Rectifier
  • Power IC
  • Others

Market, By Voltage Range

  • Less than 100 V
  • 100-500 V
  • More than 500 V

Market, By End-use Industry

  • Aerospace & defense
  • Automotive
  • Consumer electronics
  • Energy & power
  • Healthcare
  • Industrial
  • IT & telecommunications
  • Others

The above information is provided for the following regions and countries:

  • North America
    • U.S.
    • Canada
  • Europe
    • UK
    • Germany
    • France
    • Italy
    • Spain
    • Russia
    • Rest of Europe
  • Asia Pacific
    • China
    • India
    • Japan
    • South Korea
    • ANZ
    • Rest of Asia Pacific 
  • Latin America
    • Brazil
    • Mexico
    • Rest of Latin America 
  • MEA
    • UAE
    • Saudi Arabia
    • South Africa
    • Rest of MEA

 

Authors: Suraj Gujar, Sandeep Ugale

Frequently Asked Questions (FAQ) :

Gallium Nitride (GaN) semiconductor device industry was valued at over USD 17.5 billion in 2023 and is estimated to register over 22.5% CAGR between 2024 and 2032 as they offer superior performance compared to traditional silicon-based devices.

The RF semiconductors segment in the GaN semiconductor device industry is estimated to register a 23.5% CAGR from 2024 to 2032 as they are witnessing growing uses in defense, aerospace, and telecommunications applications.

Asia Pacific market for GaN semiconductor device held over 30% share in 2023 and will grow significantly through 2032 owing to growing infrastructure development investments, increased EV adoption, and the rising demand for consumer electronics.

Cree, Inc., Efficient Power Conversion Corporation, Fujitsu Ltd., GaN Systems, Infineon Technologies AG, Mitsubishi Electric Group, NexGen Power Systems, NXP Semiconductors N.V., Odyssey Semiconductor Technologies, Inc., Qorvo, Inc., ROHM Co., Ltd., STMicroelectronics N.V., and Sumitomo Electric Industries, Ltd.

GaN Semiconductor Device Market Scope

Buy Now


Premium Report Details

  • Base Year: 2023
  • Companies covered: 16
  • Tables & Figures: 361
  • Countries covered: 22
  • Pages: 200
 Download Free Sample