Gallium Nitride (GaN) Power Chips for EVs Market Size & Share 2025 - 2034

Gallium Nitride Power Chips for EVs Market Size

The global gallium nitride (GaN) power chips for EVs market size was valued at USD 297 million in 2024. The market is set to expand from USD 360.1 million in 2025 to USD 1.5 billion by 2034, at a CAGR of 15.5% according to latest report published by Global Market Insights Inc.

As the automakers adopted high frequency, high density conversion stages at volume. The inflection tracks surging EV sales and charging buildouts that expand the total pool of power electronics content per vehicle and per charging site. Global EV sales reached 17 million in 2024 and exceeded 20% of new car sales, while the global fleet neared 58 million, driving sustained demand for efficient power conversion across vehicles and infrastructure.
 

From 2025 to 2034, the market is forecast to grow from USD 360.1 million to USD 1.52 billion at a 15.5% CAGR, supported by fleet expansion, rising OBC power levels (moving toward 11–19.2 kW), and increased GaN penetration across DC–DC converters and charger topologies where high-frequency operation yields system-level gains. Year-over-year growth moderates from the early triple-digit surge to low 20s in the mid-2020s and down toward the mid-teens into the early 2030s as volumes scale and pricing normalizes.
 

GaN’s On Board Charges edge is clear in hardware demonstrations, 6.6 kW GaN design at 100 kHz achieved 99% peak efficiency while cutting volume by 53% and mass by 79% versus a silicon baseline, lifting power density from 3.9 kW/L to 10.5 kW/L and specific power from 1.6 to 9.6 kW/kg key levers for EV range and packaging. Recent OBC prototypes based on 650 V GaN switches have also demonstrated high-density, bidirectional operation suitable for V2G-ready designs.
 

Public charging points doubled between 2022 and 2024 to over 5 million globally, fast chargers rose to 2 million, and ultra-fast units (>150 kW) increased by more than 50% all of which intensify the need for compact, efficient conversion where GaN thrives in PFC and DC–DC stages. Because of this, we expect charger makers to standardize higher-frequency designs in space-constrained urban sites and depot charging, reinforcing GaN demand in the mid-voltage class.
 

North America’s GaN adoption is supported by federal incentives for EV purchases and charging buildouts, including clean vehicle credits and the NEVI program funding fast charging corridors. The U.S. market benefits from government roadmaps targeting 200 kW, 800 V traction systems and high-density OBC benchmarks, which steer suppliers toward high-frequency GaN designs in the near term. The U.S. electric vehicle market reached roughly 1.6 million sales in 2024 (about 10% share), a base that underpins rising OBC/DC–DC volumes that favor GaN. Canada’s policy support and provincial programs add further momentum as local charging networks expand.
 

Asia Pacific market leads globally, with China accounting for nearly two-thirds of EV sales and dominating public charging installations at over 3.25 million units, creating the world’s largest OBC and charger opportunity for GaN. China’s policies, trade-in schemes, and V2G roadmaps reinforce growth, while India’s PM e-DRIVE and Southeast Asian incentives broaden the regional base. Japan and South Korea contribute advanced R&D and supply chain capabilities, and as 800 V platforms rise in premium segments, readiness for high-voltage GaN will shape the next phase of market development in Asia Pacific.
 

Gallium Nitride Power Chips for EVs Market Trends

The industry is shifting from stand-alone discretes to integrated half-bridge stages and modules that co-package GaN switches with drivers and protection, cutting layout sensitivity and EMI while improving thermal paths. Public–private programs have accelerated commercialization of WBG technologies, catalyzing integrated GaN solutions for chargers and OBCs. In parallel, automakers are integrating multi-functional power domains, reinforcing the trend toward higher integration levels.
 

Public charging points doubled between 2022 and 2024 to over 5 million, and ultra-fast chargers (>150 kW) jumped by 50% in the same period. Regulatory mandates for high-power charging stations are lifting the bar for dense, efficient conversion stages. Extreme fast-changing requirements push power electronics toward higher frequency and density an alignment where GaN performs exceptionally well in PFC and LLC stages.
 

Demonstrated OBC converters show GaN raising power density by 170% while trimming mass 79% versus silicon baselines, at 99.0% peak efficiency in a 6.6 kW dual active bridge prototype. Analyses highlight that GaN devices can operate at much higher switching frequencies with significantly lower conduction losses versus silicon, enabling shrinkage of magnetics and cooling hardware while cutting losses by 60–80% in advanced converters. Design teams are also re-optimizing switching frequencies to balance converter gains with motor parasitic losses in traction-adjacent use-cases.
 

Research programs have shown 1.2 kV GaN MOSFETs with high-κ HfO2 gate dielectrics achieving record low gate leakage and improved current density, positioning vertical GaN to compete with SiC at ≤1.2 kV once substrates and process maturity converge. Yet, automotive qualification for 800 V+ and 150 kW traction remains ahead; industry roadmaps expect readiness near the decade’s end given native GaN substrate costs and reliability proofs still in progress.
 

Gallium Nitride Power Chips for EVs Market Analysis

Based on device architecture, the gallium nitride power chips for EVs market is divided into lateral GaN devices and vertical GaN devices. The lateral GaN devices segment dominated the market accounting for around 70% share in 2024 and is expected to grow at a CAGR of 16.1% from 2025 to 2034.
 

• Lateral GaN devices remain the commercial workhorse in EV power electronics, serving OBC, DC–DC, and auxiliary systems up to 650 V, supported by automotive-qualified portfolios from multiple suppliers. Their AlGaN/GaN HEMT structure on silicon enables high electron mobility and high critical field strength, which translates to low on-resistance at elevated blocking voltages compared with silicon devices.
   
• As the legacy 200 mm silicon fabs can be leveraged, GaN-on-Si offers a compelling cost curve once yields scale, while its high switching speed allows for smaller magnetics and thermal hardware in OBC LLC and DAB topologies. The practical ceiling today’s lateral devices are typically limited to ~650 V for automotive-qualified deployments, which concentrate adoption below traction voltage levels.
   
• Vertical GaN represents the high-voltage frontier. Research has demonstrated 1.2 kV class MOSFETs with high-κ dielectrics and laboratory diodes up to several kV, indicating viable device physics for traction-level blocking voltages. However, substrate cost and availability, along with the need for robust short-circuit, avalanche, and stability characteristics, mean automotive readiness is expected later in the decade. For now, most GaN adoption will remain in OBC, DC–DC, and charger conversion where mid-voltage performance dominates.

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Based on voltage, the gallium nitride power chips for EVs market is categorized into low voltage (≤100V), medium voltage (100V-650V) and high voltage (>650V). Medium voltage (100V-650V) segment dominated the market with 67% share in 2024, and the segment is expected to grow at a CAGR of 16% between 2025 and 2034.
 

• Mid-voltage GaN (100–650 V) commands the lion’s share of deployments because OBCs (400 V battery systems today, rising to 800 V designs through 2030) and many DC–DC converters fall squarely in this range. This is where GaN’s high-frequency advantage directly translates into density and efficiency gains in PFC & LLC or totem-pole PFC plus resonant stages in 6.6–19.2 kW OBCs.
   
• Low-voltage GaN (≤100 V) addresses auxiliary 12/48 V converters where extremely high efficiencies at modest power levels are feasible, although silicon often remains more cost competitive for basic functions.
   
• High-voltage GaN (>650 V) is the emerging segment that will determine traction penetration. Multi-level inverter and ANPC topologies can bridge the gap while vertical GaN technology matures.
   

Based on vehicles, the gallium nitride power chips for EVs market is divided into passenger cars, commercial vehicles, and two & three wheelers. Passenger cars segment dominated the market and was valued at USD 225.7 million in 2024.
 

• Million-unit sales per year passenger EVs represent the largest addressable base for power electronics. This scale controls the order book bunches directly for onboard chargers (OBCs), DC–DC converters, and high-efficiency compact designs where GaN devices exclusively triumphs. On the contrary, commercial EV penetration is accelerating but with lesser intensity as compared to passenger EVs, constraining the penetration of the former segment with GaN devices at present.
   
• BYD introduced Chinese markets to the new Seal 06 DM-i plug-in hybrid sedan in November 2024, underscoring the company’s expanding move towards compact high-efficiency passenger EVs. The vehicle combines sophisticated onboard charging as well as DC–DC conversion stages where GaN power devices are gaining traction to minimize efficiency improvement as well as to decrease the size of the systems.
   
• The PCs stress lightweighting, packaging optimization, and energy density to maximize driving range as well as user experience. High power density, lower cooling requirements, and smaller power stages offered by GaN best fit these design imperatives. As carmakers strive to achieve thinner, lighter OBCs as well as DC–DC units, Adoption of GaN gains pace. Space as well as weight considerations are less significant in commercial fleets, where High-voltage traction inverters represented by SiC gain advantage.
   
• Passenger EV OEMs are generally faster to adopt new semiconductor technologies through strong consumer market competition as well as regulatory requirements. This accelerates the OBC as well as charging system qualification of GaN devices with backing from pilot projects as well as early volumes. However, the heavy-duty as well as the bus segment tend to experience longer qualification periods because of the reliability needs as well as the higher stress on the voltage, thereby dampening adoption in GaNs.
   

Based on sales channel, the gallium nitride power chips for EVs market is divided into OEMs and aftermarket. The OEMs segment dominates the market and was valued at USD 257.5 million in 2024.
 

• OEMs lead the market because they incorporate GaN power devices end-to-end within EV platforms like onboard chargers (OBCs), DC-DC converters, and traction systems. Unlike third-party providers, OEMs own the entire design process, so they can stress compactness, efficiency, and light weight. This enables them to integrate GaN early in their platforms with compliance to performance and regulatory targets and cost competitiveness on scale.
   
• Top OEMs spend highly on R&D and establish direct collaborations with GaN chipmakers to jointly develop application-specific solutions. This enables faster automotive qualification as well as reliability under challenging conditions such as high temperatures, vibrations, and fast charging. Since OEMs are nearest to the end-vehicle specifications, they push the adoption curve harder than Tier-2 suppliers, helping them stay ahead on efficiency as well as innovation metrics.
   
• Hyundai Motor Company joined hands with Infineon Technologies in July 2023 to procure GaN and SiC semiconductors for future-gen EV platforms. The pact concerned the provision of GaN devices to onboard chargers as well as DC–DC converters with higher efficiency as well as light power electronics in passenger EVs from the company.
   
• OEMs derive scale advantage through long-term procurements and multi-sourcing strategies with GaN providers to decrease cost hurdles. Their mature supply chains also facilitate easy localization and integration of GaN devices within world-wide EV platforms. Through leadership in volumes along with supplier leverage, OEMs achieve a wider competitive advantage in introducing GaN at mass-market volumes beyond aftermarket or smaller system integrators.

China dominated Asia Pacific gallium nitride (GaN) power chips for EVs market with revenue of USD 73.4 million in 2024.
 

• China accounts for nearly two-thirds of global EV sales, with more than 8 million EVs sold in 2023. This massive scale creates the deepest addressable market for GaN power chips, as each EV requires onboard chargers, DC–DC converters and charging infrastructure that benefit from GaN’s compactness and efficiency. The sheer production volume puts China far ahead of other Asia Pacific markets like Japan, South Korea, or India.
   
• Government aggressive policies in favor of new energy vehicles (NEVs), charging networks, as well as indigenous semiconductor manufacturing converge to push the region to dominant market leadership. Subsidies, local manufacturing obligations, as well as V2G (vehicle-to-grid) roadmaps, accelerate quicker adoption of high-power electronics. Such policy push incites both demand side as well as GaN localization, giving the region a strong ecosystem push.
   
• As one of the most crucial shares of world gallium supply, China controls the market share of GaN wafer manufacturing with companies such as Innoscience spearheading high-volume production. The country is home to key players of the world such as BYD, NIO, and XPeng that are adopting GaN-based technologies in OBCs as well as charging systems. The vertically connected value proposition from the raw material end to finished vehicles provides China with unrivaled scalability of GaN adoption.
   

US GaN power chips for EVs market will grow tremendously with CAGR of 13.8% between 2025 and 2034.
 

• The US government is accelerating EV adoption with the Inflation Reduction Act (IRA), the Clean Vehicle Credits, and the National Electric Vehicle Infrastructure program (NEVI), financing across-country fast-charging corridors. As penetration of EVs exceeds 10% of new sales, high-efficiency power electronic demand picks up pace. GaN, given its diminutive and lightweight nature, will be poised to gain as onboard chargers and DC–DC systems are outsized to achieve the targets of cost and efficiency.
   
• The U.S. hosts early GaN leaders like Navitas Semiconductor, EPC, and Transphorm, as well as DOE-sponsored groups such as PowerAmerica. Such organizations are driving automotive-qualified GaN devices to commercial volumes. Ongoing investment in state-of-the-art packaging, vertical GaN development, as well as 800 V system preparedness, the innovation pipeline of the U.S. guarantees GaN will quickly infiltrate the EV platform throughout the decade.
   
• Navitas Semiconductor made an announcement in January 2024 that the company’s GaNFast power ICs will be incorporated into next-gen onboard chargers of the U.S. EV platforms. The company pointed out that the products of Navitas allow 3× higher power density as well as 50% smaller systems with respect to silicon, consistent with the drive towards compact, high-efficiency power electronics of the U.S. OEMs.
   
• Government and private funding are hastening the installation of fast-charging and ultra-fast (150 kW+) stations throughout the United States. As high-power charging becomes the norm, miniature, high-frequency GaN devices are gaining preference in conversion stages. As OEMs such as Tesla, GM, and Ford are growing their EV fleets along with charging infrastructures, the United States is building a strong demand pull during GaN implementation within vehicles as well as charging infrastructure.
   

The gallium nitride power chips for EVs market in Germany will experience robust growth between 2025 and 2035.
 

• Germany is Europe’s biggest auto hub, with top OEMs like Volkswagen, BMW, and Mercedes-Benz that are quickly building out EV lineups faster. As these auto giants strive to achieve enhanced efficiency, miniaturization, and lightweight features in OBCs and DC–DC converters, adoption of GaN becomes a natural evolution. The availability of Tier-1 players like Bosch and Continental also quickens adoption of GaN in next-gen EV architectures.
   
• Germany’s mature semiconductor R&D ecosystem, fortified with efforts under the EU Chips Act, is driving GaN commercialization at high pace. Multilateral cooperation between research institutes, automotives OEMs, and semiconductor companies will lead to quicker GaN adoption and qualification to automotive grade. Alongside Germany’s expanding fast-charging networks, the ecosystem offers rich soil to achieve strong growth in the GaN power chip market in the EV segment.
   
• Volkswagen Group in September 2023 said that it collaborated with Infineon Technologies to procure wide-bandgap semiconductors, such as GaN power devices, as part of its next-gen EV platforms. The deal concerned onboard chargers as well as fast-charging systems, wherein GaN is superior in terms of efficiency as well as smaller size compared to silicon.
   

The gallium nitride (GaN) power chips for EVs market in Brazil will experience significant growth between 2025 and 2034.
 

• Latin America holds a 3% share of the gallium nitride (GaN) power chips for EVs market in 2024 and is growing with a significant CAGR of 10.5%. Brazil is experiencing high-speed adoption of EVs, fueled by government incentives, duty cuts on electric and hybrid vehicles, and efforts to accelerate power infrastructure growth. As the nation strives to broaden the scope of its auto market beyond biofuels and hybrids, penetration of EVs will continue to grow steadily. The shift will spur growth in the market for high-efficiency power electronics like GaN mainly in onboard chargers and DC–DC converters where minimization of size as well as maximized power density are paramount.
   
• The charging network in Brazil has expanded dramatically, with fast charging centers being rolled out along urban centers as well as long-distance highways. Automakers as well as energy companies are committing to ultra-fast charging schemes to enable long-distance operation of EVs. High frequency switching as well as size reduction with resultant efficiency improvement in the power conversion stages of GaN cause it to be inherently suited to the expanding Brazilian charging infrastructure, hastening adoption.
   
• The region is home to one of the highest automobile industries in Latin America, with prominent OEMs including Volkswagen, General Motors, and Stellantis having local facilities. As the OEMs start launching the Brazilian market with EV models, the requirement to cover the region with high-end semiconductor content will be growing. The motive to promote regionalized chains as well as possible collaborations with GaN providers will form a valid basis to see substantial growth of GaN power chips in the Brazilian EV market.
   
• BYD in March 2024 launched the construction of the electric vehicle manufacturing complex at Camaçari, Brazil, with over USD 600 million of investment. The complex will involve local assembly of electric vehicles, as well as the assembly of electric buses, as well as battery systems. Since BYD has already installed GaN-based onboard chargers and DC–DC converters in some of the company's existing models of electric vehicles.
   

The Gallium nitride power chips for EVs market in UAE is expected to experience robust growth between 2025 & 2034.
 

• The UAE is driving aggressive EV adoption within its Net Zero 2050 strategy as well as Vision 2030 initiatives. Governments incentivize consumers to upgrade to EVs with free parking, road-toll passes, as well as lowered registration fees. As adoption continues to increase, the requirement across vehicles increases for smaller, highly efficient onboard chargers as well as DC–DC converters, driving a significant market opportunity for GaN power chips that are superior to silicon in both space savings as well as efficiency.
   
• Dubai Electricity and Water Authority (DEWA) made the announcement in October 2023 to expand the network of its EV Green Charger, surpassing over 1,000 charging stations throughout Dubai. Some of the newly installed fast and ultra-fast chargers utilize wide-bandgap semiconductors, such as GaN devices, to gain wider efficiencies as well as smaller form factors.
   
• The UAE is quickly deploying EV charging stations, with Dubai Electricity and Water Authority (DEWA) and Abu Dhabi’s Abu Dhabi Water & Electricity Authority (ADWEA), leading investment in fast & ultra-fast charging networks. As GaN is superior in high-frequency, high-efficiency conversion, it becomes the go-to solution to fast-charging systems. The drive towards installing 150 kW+ charging stations along highways & smart city hubs puts GaN as a key enabler of the efficiency of charging infrastructures.
   

Gallium Nitride Power Chips for EVs Market Share

The top 7 companies in the market are Navitas Semiconductor, GaN Systems, EPC, Texas Instruments, Infineon Technologies, ROHM Semiconductor, and STMicroelectronics. These companies hold around 90% of the market share in 2024.
 

• Navitas Semiconductors holds a market share of 40% of the market pioneer in GaN power ICs combining GaN FETs, gate drivers, and protection in compact implementations for OBC and DC–DC. Integrated architecture reduces BoM and layout sensitivity while easing EMC, aligning with high-frequency OBC targets.
   
• GaN Systems provides automotive-qualified 650 V discretes and modules with low RDS (on) that serve high-density LLC and PSFB implementations. Its integration into Infineon expands module packaging and Tier-1 channels for broader traction-adjacent opportunities.
   
• EPC Corporation develops enhancement-mode GaN devices that emphasize ultra-low losses and small footprints, suited to hundreds of kHz OBC/DC–DC switching where density and EMI matter most.
   
• Texas Instruments offers GaN power IC platforms for OBCs that target high efficiency and density with integrated drivers and protection, leveraging automotive qualification processes and a broad analog/mixed-signal portfolio for system solutions.
   
• Infineon Technologies combines internal GaN development with GaN Systems’ assets, emphasizing module integration and 800 V platform readiness over the decade, while benefiting from automotive qualification depth and global manufacturing reach.
   
• ROHM Semiconductor is a vertically integrated WBG supplier investing in GaN device and packaging reliability for OBC/DC–DC, with strong Japanese OEM ties supporting application co-development.
   
• STMicroelectronics follows a dual-track GaN/SiC strategy and develops modules that underpin system solutions for powertrains, while leveraging its MCU and sensing portfolios for integrated designs.
   

Gallium Nitride Power Chips for EVs Market Companies

Major players operating in the gallium nitride (GaN) power chips for EVs industry include:
 

• EPC
• GaN Systems
• Infineon Technologies
• Innoscience
• Navitas
• Power Integrations
• ROHM Semiconductor
• STMicroelectronics
• Texas Instruments
• Transphorm
   
• Navitas Semiconductor has established itself as a pioneer in GaN power ICs, combining GaN FETs, gate drivers, and protection features in highly compact solutions. Its integrated architecture reduces bill of materials, simplifies layouts, and improves EMC performance. This gives Navitas a strong edge in onboard chargers (OBCs) and DC–DC converters where efficiency and power density are top priorities, making it a front-runner in the EV GaN market.
   
• GaN Systems (Infineon) plays a critical role with its automotive-qualified 650 V GaN devices that are optimized for high-density LLC and PSFB implementations. Following its acquisition by Infineon, GaN Systems benefits from expanded module packaging expertise and access to Tier-1 automotive suppliers, giving it stronger traction-adjacent opportunities. This integration significantly enhances Infineon’s GaN footprint in the automotive sector.
   
• Infineon Technologies leverages its global scale and deep automotive qualification experience to dominate the EV semiconductor space. With the addition of GaN Systems’ assets, Infineon has broadened its GaN portfolio while also driving module integration and preparing for 800 V platform readiness. Its global manufacturing footprint and position as the world’s largest automotive semiconductor supplier make Infineon a cornerstone player in the GaN EV market.
   
• EPC Corporation is recognized for its specialization in enhancement-mode GaN devices that deliver ultra-low losses and compact footprints. Its devices are particularly well-suited for OBC and DC–DC converters switching at hundreds of kilohertz, where efficiency and reduced EMI are critical. EPC’s focus on performance-driven, high-frequency GaN solutions has cemented its reputation as a go-to supplier for compact EV power systems.
   
• Texas Instruments integrates GaN technology into its wider ecosystem of analog, mixed-signal, and power management solutions. Its GaN platforms target onboard charging systems with a focus on efficiency and density, supported by integrated drivers and protection. By leveraging its extensive automotive qualification processes and system-level expertise, TI delivers turnkey solutions that shorten design cycles for automakers.
   
• ROHM Semiconductor stands out as a vertically integrated wide bandgap supplier investing heavily in GaN device reliability and advanced packaging. Its strong partnerships with Japanese OEMs and Tier-1s allow for collaborative co-development of GaN applications in EVs. ROHM’s commitment to both SiC and GaN ensures it remains a key supplier for a broad range of power electronic systems in electric vehicles.
   
• STMicroelectronics adopts a dual-track strategy by advancing both GaN and SiC technologies, enabling it to offer complete solutions for EV powertrains. Its GaN efforts are complemented by strong module development, while its microcontroller and sensing portfolios provide additional system integration advantages. This positions STMicro as a versatile supplier capable of addressing multiple voltage classes in the EV market.
   
• Emerging differentiation is also visible among players like EPC, Navitas, and Transphorm, who are pushing the boundaries in integration, packaging, and vertical GaN development. These companies gain traction by focusing on specific EV power stages onboard charging, DC–DC conversion, and eventually traction inverters offering automakers specialized, high-performance GaN solutions that complement the broader portfolios of established giants.
   

Gallium Nitride Power Chips for EVs Industry News

• In January 2025, The U.S. Department of Homeland Security has officially started its wide-ranging AI Safety and Security Board, introducing new guidelines for AI utilization across federal entities. The initiative establishes mandatory AI impact assessments for federal AI systems that process citizen data, with implementation beginning in July 2025.
   
• In July 2025, Navitas Semiconductor announced a strategic partnership with PSMC (Powerchip Semiconductor Manufacturing Corporation) to begin 200 mm GaN-on-silicon production. This initiative aims to scale GaN IC manufacturing for electric vehicles, renewable energy, and fast-charging systems, strengthening Navitas’ global supply chain and supporting EV industry growth.
   
• In May 2024, Infineon Technologies launched its CoolGaN 650 V G5 transistor family, marking the company’s next-generation GaN devices for automotive and industrial power electronics. The new series enhances switching efficiency and power density for onboard chargers and DC–DC converters in EV applications, reinforcing Infineon’s leadership in wide-bandgap semiconductors.
   
• In August 2024, EPC Corporation introduced its EPC2361 GaN FET, featuring an ultra-low 1 mΩ on-resistance. The device enables higher power density and efficiency in EV onboard charging and fast-charging systems. This release highlighted EPC’s continued innovation in compact, high-performance GaN devices suitable for next-generation electric vehicles.
   
• In August 2024, Infineon Technologies expanded its portfolio with the CoolGaN Drive series integrated single switches and half-bridge drivers. The product line targets high-efficiency power conversion systems in EVs and charging infrastructure, offering reduced component count and improved system-level integration.
   
• In March 2024, Transphorm Inc. announced the expansion of its AEC-Q101 qualified 650 V GaN FET lineup, enabling automotive-grade reliability for onboard chargers and DC–DC converters. This advancement positions Transphorm as one of the few companies globally with fully qualified GaN solutions for EV powertrain applications.
   

The gallium nitride (GaN) power chips for EVs market research report includes in-depth coverage of the industry with estimates & forecasts in terms of revenue ($Bn) and shipment (in units) from 2021 to 2034, for the following segments:

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Market, By Device Architecture

• Lateral GaN devices
• Vertical GaN devices

Market, By Voltage

• Low voltage (≤100V)
• Medium voltage (100V-650V)
• High voltage (>650V)

Market, By Package

• Discrete packages
• Power modules
• Integrated power stages

Market, By Application

• Traction inverters
• On-board chargers (OBC)
• DC-DC converters
• Charging infrastructure
• Auxiliary power systems

Market, By Propulsion

• Battery electric vehicles (BEV)
• Plug-in hybrid electric vehicles (PHEV)
• Mild hybrid electric vehicles (MHEV)
• Fuel cell electric vehicles (FCEV)

Market, By Vehicle

• Passenger cars
  • Hatchback
  • Sedan
  • SUV 
• Commercial vehicles
  • LCV
  • MCV
  • HCV
• Two & three wheelers

Market, By Sales Channel

• OEMs
• Aftermarket

The above information is provided for the following regions and countries:

• North America
  • US
  • Canada
• Europe
  • Germany
  • UK
  • France
  • Italy
  • Spain
  • Russia
  • Nordics
• Asia Pacific
  • China
  • India
  • Japan
  • Australia
  • South Korea
  • Philippines
  • Indonesia
• Latin America
  • Brazil
  • Mexico
  • Argentina
• MEA
  • South Africa
  • Saudi Arabia
  • UAE