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GaN Semiconductor Device Market Trends

  • Report ID: GMI8345
  • Published Date: Feb 2024
  • Report Format: PDF

GaN Semiconductor Device Market Trends

GaN technology is becoming increasingly important for power electronics applications due to its superior efficiency and power density. This is particularly relevant for industries including data centers, renewable energy, and Electric Vehicles (EVs). Owing to their high-frequency performance and power handling capabilities, GaN-based RF devices are gaining popularity in emerging 5G applications, satellite communication systems, and telecommunications infrastructure. Scalability and cost reductions brought about by GaN-on-silicon technology advancements are opening up GaN devices to a wider range of applications. For instance, in January 2024, Silvaco Group, Inc., a leading provider of TCAD, EDA software, and design IP, partnered with GaN Valley to drive advancements in efficient GaN power device design. By leveraging its Victory TCAD platform, Silvaco aims to empower customers to innovate and optimize performance in GaN-based semiconductor power devices. The Victory TCAD platform offers a comprehensive simulation environment, incorporating diverse numerical methods, physical models, SPICE model generation, and a user-friendly graphical interface, tailored specifically for the latest generation of GaN-based power devices.
 

GaN microelectronics are preferred for high-speed and high-power applications, expanding their uses in wireless communication networks, industrial automation, and radar systems. GaN technology will continue to be incorporated into medical devices, automotive systems, and consumer electronics due to the increasing need for smaller form factors, increased efficiency, and improved performance. In general, the GaN semiconductor device industry is distinguished by constant innovations and industry diversification.
 

Authors: Suraj Gujar, Sandeep Ugale

Frequently Asked Questions (FAQ) :

Gallium Nitride (GaN) semiconductor device industry was valued at over USD 17.5 billion in 2023 and is estimated to register over 22.5% CAGR between 2024 and 2032 as they offer superior performance compared to traditional silicon-based devices.

The RF semiconductors segment in the GaN semiconductor device industry is estimated to register a 23.5% CAGR from 2024 to 2032 as they are witnessing growing uses in defense, aerospace, and telecommunications applications.

Asia Pacific market for GaN semiconductor device held over 30% share in 2023 and will grow significantly through 2032 owing to growing infrastructure development investments, increased EV adoption, and the rising demand for consumer electronics.

Cree, Inc., Efficient Power Conversion Corporation, Fujitsu Ltd., GaN Systems, Infineon Technologies AG, Mitsubishi Electric Group, NexGen Power Systems, NXP Semiconductors N.V., Odyssey Semiconductor Technologies, Inc., Qorvo, Inc., ROHM Co., Ltd., STMicroelectronics N.V., and Sumitomo Electric Industries, Ltd.

GaN Semiconductor Device Market Scope

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Premium Report Details

  • Base Year: 2023
  • Companies covered: 16
  • Tables & Figures: 361
  • Countries covered: 22
  • Pages: 200
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