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One of the prominent trends in the silicon carbide industry is the development of advanced manufacturing processes & technologies. There are ongoing efforts to improve the quality, yield, and cost-effectiveness of SiC wafers & devices. Innovations in SiC epitaxy, wafer bonding, and device packaging techniques are facilitating the production of large & high-quality SiC wafers. These advancements are expected to enhance the scalability and commercial viability of silicon carbide devices, thereby increasing their accessibility across a wide range of industries and applications. Furthermore, there is a rising focus on integrating silicon carbide with other advanced materials & technologies.