GaN and SiC Power Semiconductor Market size worth $3bn by 2025
Published Date: June 6, 2019 Authors: Preeti Wadhwani, Shubhangi Yadav
GaN and SiC Power Semiconductor Market size is set to surpass USD 3 billion by 2025, according to a new research report by Global Market Insights, Inc.
The power semiconductor devices are witnessing high adoption for different power applications. As conventional silicon-based devices are approaching their material limits, silicon carbide and gallium nitride are becoming more popular and are being adopted across various industry verticals due to its higher dielectric field strength than silicon. Moreover, wider bandgap and thermal energy allows it to withstand higher temperatures and voltages making it an ideal substitute for silicon. The GaN and SiC power semiconductor market has significantly emerged as the devices finding their applications in areas such as PV inverters, hybrid & electric vehicles, UPS and other power applications.
Various power industries are affected by energy loss, particularly during power conversions. Efficiency is a crucial factor for industries to ensure better performance. Limitations to achieve the required efficiency often lead to high costs. As a result, semiconductor industries are focusing on adopting materials with more power-suitable characteristics giving lucrative growth opportunities to the market. These Wider Band Gap (WBG) devices have made it possible to make small packaged and compact electronic devices which have high power density. The power semiconductor industry is aiming to develop devices with less weight and low-cost creating opportunities for the market expansion.
Browse key industry insights spread across 150 pages with 111 market data tables & 22 figures & charts from the report, “GaN and SiC Power Semiconductor Market Size By Product (SiC Power Module, GaN Power Module, Discrete SiC, Discrete GaN), By Application (Power Supplies, Industrial Motor Drives, H/EV, PV Inverters, Traction), Industry Analysis Report, Regional Outlook, Application Development Potential, Price Trend, Competitive Market Share & Forecast, 2019 – 2025” in detail along with the table of contents:
Gallium nitride power devices hold high growth potential to be used in several power semiconductor applications. The material can be used to enhance the electronic performance and power capacity. GaN offers several benefits over conventional silicon in transistors on account of its features such as high-power density, miniaturization of systems and increased efficiency. While silicon has been majorly used for many years in the power semiconductor industry, companies are increasingly focusing on improving GaN device reliability for high power systems.
The semiconductor industry developments are one of the key factors influencing the market revenue. The U.S. is the dominant region considering the market share in the global semiconductor industry with over USD 200 billion in 2018, which is almost half of the global sales according to the Semiconductor Industry Association (SIA).Furthermore, the U.S. semiconductor industry spends one-fifth of its revenue for R&D activities, making it an important region for the market growth.
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The renewable energy applications are projected to showcase significant growth during the forecast period. PV inverters, which play a crucial role in converting sunlight into electricity, are expected to adopt these devices to have more efficient power conversion. The SiC embedded PV inverters incur much lower switching losses and increase the system efficiency. Use of SiC devices for the PV inverter applications improves the power density be minimizing the heat dissipation and can also reduce the size of passive components.
The rise in the application of IGBT modules has become a prominent growth driver of the market. They are being widely used in applications such as railway traction and propulsion. Metros, electric & diesel-electric locomotives, tramways, and high-speed trains are increasingly adopting IGBT modules. The capabilities of SiC to provide higher efficiency and lower losses are enabling its use in the modules. Automation companies, such as ABB, provide IGBT modules for railway applications.
The comparatively higher costs of the devices can be a restraining factor for the GaN and SiC power semiconductor market to some extent. The conventional silicon materials for building power devices have been used in the semiconductor industry for many years and the market is not mature for an immediate switch to materials such as GaN. The benefits of the materials and their capabilities are expected to propel the growth of the market.
Some of the leading players operating in the market include Mitsubishi Electric Corporation, Infineon Technologies AG, ROHM Semiconductor, and NXP Semiconductors. Many companies are becoming inclined toward building more compact and highly efficient power semiconductor devices. The industry is observing rapid technological advancements with companies focusing on research & development activities.